Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

  1. Tautz, M.
  2. Kuchenbrod, M.T.
  3. Hertkorn, J.
  4. Weinberger, R.
  5. Welzel, M.
  6. Pfitzner, A.
  7. Díaz, D.D.
Aldizkaria:
Beilstein Journal of Nanotechnology

ISSN: 2190-4286

Argitalpen urtea: 2020

Alea: 11

Orrialdeak: 41-50

Mota: Artikulua

DOI: 10.3762/BJNANO.4 GOOGLE SCHOLAR