Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology
- Aseev, P.
- Rodriguez, P.S. 1
- Gomez, V.J.
- Kumar, P.
- Alvi, N.H.
- Mánuel, J.M.
- Morales, F.M.
- Jiménez, J.J.
- García, R.
- Calleya, E.
- Nötzel, R.
-
1
Universidad de La Laguna
info
Actas:
International Conference on Solid State Devices and Materials. SSDM 2014
Año de publicación: 2014
Tipo: Aportación congreso
Resumen
Chemically uniform, compact and thick InGaN layers covering the full alloy composition range are grown on bare Si(111) substrates by plasma-assisted molecular beam epitaxy. Photoluminescence emission is observed up to room temperature from the ultra-violet to the near-infrared including the important 1.3 and 1.55 µm telecom wavelength bands. This opens the door for the direct integration of InGaN based devices with well-established Si technology.
Referencias bibliográficas
- [1] P. Aseev et al., Appl. Phys. Express 6 (2013) 115503.
- [2] L. Hsu and W. Walukiewicz, J. Appl. Phys. 104 (2008) 24507.
- [3] I. Ho and G. Stringfellow, Appl. Phys. Lett. 69 (1996) 2701.