Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

  1. Aseev, P.
  2. Rodriguez, P.S. 1
  3. Gomez, V.J.
  4. Kumar, P.
  5. Alvi, N.H.
  6. Mánuel, J.M.
  7. Morales, F.M.
  8. Jiménez, J.J.
  9. García, R.
  10. Calleya, E.
  11. Nötzel, R.
  1. 1 Universidad de La Laguna
    info

    Universidad de La Laguna

    San Cristobal de La Laguna, España

    ROR https://ror.org/01r9z8p25

Actas:
International Conference on Solid State Devices and Materials. SSDM 2014

Año de publicación: 2014

Tipo: Aportación congreso

DOI: 10.7567/SSDM.2014.C-3-1 GOOGLE SCHOLAR lock_openAcceso abierto editor

Resumen

Chemically uniform, compact and thick InGaN layers covering the full alloy composition range are grown on bare Si(111) substrates by plasma-assisted molecular beam epitaxy. Photoluminescence emission is observed up to room temperature from the ultra-violet to the near-infrared including the important 1.3 and 1.55 µm telecom wavelength bands. This opens the door for the direct integration of InGaN based devices with well-established Si technology.

Referencias bibliográficas

  • [1] P. Aseev et al., Appl. Phys. Express 6 (2013) 115503.
  • [2] L. Hsu and W. Walukiewicz, J. Appl. Phys. 104 (2008) 24507.
  • [3] I. Ho and G. Stringfellow, Appl. Phys. Lett. 69 (1996) 2701.