Publicacions en col·laboració amb investigadors/es de Universidad Autónoma de Madrid (18)

2014

  1. Optimized dark matter searches in deep observations of Segue 1 with MAGIC

    Journal of Cosmology and Astroparticle Physics, Vol. 2014, Núm. 2

1992

  1. Heterojunction band offsets for polar interfaces: From a thin to a thick covalent intralayer

    Physical Review B, Vol. 46, Núm. 15, pp. 9641-9647

1990

  1. Semiconductor interface formation: The role of the induced density of interface states

    Applied Surface Science, Vol. 41-42, Núm. C, pp. 144-150

  2. The effect of a metal intralayer on the heterojunction band offset: Extrinsic and intrinsic charge neutrality levels

    Surface Science, Vol. 226, Núm. 3, pp. 371-380

1989

  1. A theoretical analysis of the heterojunction band offsets as controlled by intralayer deposition

    Surface Science, Vol. 211-212, Núm. C, pp. 503-510

1988

  1. Band offsets in SiSi1-xGex and GeSi1-xGex strained heterojunctions

    Solid State Communications, Vol. 67, Núm. 4, pp. 445-447

  2. K/Si(100) 2 × 1: A case study for the transfer of charge between alkali metals and semiconductor surfaces

    EPL, Vol. 5, Núm. 8, pp. 727-732

  3. Reply to Comment on Heterojunction valence-band-discontinuity dependence on face orientation

    Physical Review B, Vol. 37, Núm. 9, pp. 4803-4804

1987

  1. Electronic structure of interfaces

    Physica Scripta, Vol. 1987, Núm. T19A, pp. 102-108

  2. Heterojunction band offsets and the interface dielectric function

    Physical Review B, Vol. 36, Núm. 11, pp. 5920-5924

  3. Heterojunction valence-band-discontinuity dependence on face orientation

    Physical Review B, Vol. 35, Núm. 12, pp. 6468-6470

  4. Theoretical calculation for a ZnSe-Ge(110) heterojunction with an ultrathin intralayer

    Physical Review B, Vol. 35, Núm. 14, pp. 7721-7724

1986

  1. Anion-induced surface states for the ideal (100) faces of GaAs, AlAs and GaSb

    Surface Science, Vol. 172, Núm. 1, pp. 47-56

  2. Early stages of gaas-ge(Llo) interface formation

    EPL, Vol. 2, Núm. 5, pp. 385-391

  3. Many-body effects in the paramagnetic and antiferromagnetic states of the (111) silicon face

    Physical Review B, Vol. 33, Núm. 1, pp. 537-543

1985

  1. Correlation effects in the Si(111)-1 × 1 surface

    Surface Science, Vol. 152-153, Núm. PART 2, pp. 1027-1034

  2. Electronic properties of Si(111) semiconductor surfaces

    Surface Science, Vol. 162, Núm. 1-3, pp. 156-162

1982

  1. Auger linewidths for LILII,IIIV processes in Al, Mg and Na

    Journal of Physics C: Solid State Physics, Vol. 15, Núm. 31