Properties of porous silicon layers studied by voltammetric oxidation

  1. Guerrero-Lemus, R.
  2. Moreno, J.D.
  3. Martínez-Duart, J.M.
  4. Marcos, M.L.
  5. González-Velasco, J.
  6. Gómez, P.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1996

Volume: 79

Issue: 6

Pages: 3224-3228

Type: Article

DOI: 10.1063/1.361268 GOOGLE SCHOLAR
Data source: Scopus