Properties of porous silicon layers studied by voltammetric oxidation

  1. Guerrero-Lemus, R.
  2. Moreno, J.D.
  3. Martínez-Duart, J.M.
  4. Marcos, M.L.
  5. González-Velasco, J.
  6. Gómez, P.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1996

Volumen: 79

Número: 6

Pages: 3224-3228

Type: Article

DOI: 10.1063/1.361268 GOOGLE SCHOLAR
La source de données: Scopus