Determination of stress in porous silicon by micro-Raman spectroscopy

  1. Manotas, S.
  2. Agulló-Rueda, F.
  3. Moreno, J.D.
  4. Ben-Hander, F.
  5. Guerrero-Lemus, R.
  6. Martínez-Duart, J.M.
Revue:
Physica Status Solidi (A) Applied Research

ISSN: 0031-8965

Année de publication: 2000

Volumen: 182

Número: 1

Pages: 245-248

Type: Article

DOI: 10.1002/1521-396X(200011)182:1<245::AID-PSSA245>3.0.CO;2-W GOOGLE SCHOLAR
La source de données: Scopus