First demonstration of direct growth of planar high-in-composition InGaN layers on Si

  1. Kumar, P.
  2. Rodriguez, P.E.D.S.
  3. Gómez, V.J.
  4. Alvi, N.H.
  5. Calleja, E.
  6. Nötzel, R.
Aldizkaria:
Applied Physics Express

ISSN: 1882-0778,  1882-0786

Argitalpen urtea: 2013

Alea: 6

Zenbakia: 3

Mota: Artikulua

DOI: 10.7567/APEX.6.035501 GOOGLE SCHOLAR
Datuen iturria: Scopus