Two-dimensional tight-binding model of ac conductivity in porous silicon

  1. Cruz, H.
  2. Luis, D.
  3. Capuj, N.E.
  4. Pavesi, L.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1998

Volumen: 83

Número: 12

Pages: 7693-7698

Type: Article

DOI: 10.1063/1.367940 GOOGLE SCHOLAR