Selfconsistent tight-binding calculations of band offsets in GaAs/AlxGa1-xAs-(110) and GaSb/AlxGa1-xSb-(110) heterojunctions theoretical evidence for a new common-anion rule

  1. Mujica, A.
  2. Muñoz, A.
Aldizkaria:
Solid State Communications

ISSN: 0038-1098

Argitalpen urtea: 1992

Alea: 81

Zenbakia: 11

Orrialdeak: 961-963

Mota: Artikulua

DOI: 10.1016/0038-1098(92)90877-C GOOGLE SCHOLAR
Datuen iturria: Scopus