Selfconsistent tight-binding calculations of band offsets in GaAs/AlxGa1-xAs-(110) and GaSb/AlxGa1-xSb-(110) heterojunctions theoretical evidence for a new common-anion rule

  1. Mujica, A.
  2. Muñoz, A.
Revue:
Solid State Communications

ISSN: 0038-1098

Année de publication: 1992

Volumen: 81

Número: 11

Pages: 961-963

Type: Article

DOI: 10.1016/0038-1098(92)90877-C GOOGLE SCHOLAR
La source de données: Scopus