Publikationen, an denen er mitarbeitet Enrique Calleja Pardo (10)

2019

  1. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

    Journal of Alloys and Compounds, Vol. 783, pp. 697-708

2016

  1. Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint

    Journal of Crystal Growth, Vol. 447, pp. 48-54

2015

  1. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

    Applied Physics Letters, Vol. 106, Núm. 7

  2. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

    Journal of Crystal Growth, Vol. 364, pp. 123-127

  2. First demonstration of direct growth of planar high-in-composition InGaN layers on Si

    Applied Physics Express, Vol. 6, Núm. 3

  3. High in composition InGaN for InN quantum dot intermediate band solar cells

    Japanese Journal of Applied Physics, Vol. 52, Núm. 8 PART 2

  4. Near-infrared InN quantum dots on high-In composition InGaN

    Applied Physics Letters, Vol. 102, Núm. 13

  5. Spontaneous formation of InGaN nanowall network directly on Si

    Applied Physics Letters, Vol. 102, Núm. 17

  6. Uniform low-to-high in composition InGaN layers grown on Si

    Applied Physics Express, Vol. 6, Núm. 11